Mazza, AR and Yan, J-Q and Middey, S and Gardner, JS and Chen, A-H and Brahlek, M and Ward, TZ (2024) Embracing disorder in quantum materials design. In: Applied Physics Letters, 124 (23).
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Abstract
Many of the most exciting materials discoveries in fundamental condensed matter physics are made in systems hosting some degree of intrinsic disorder. While disorder has historically been regarded as something to be avoided in materials design, it is often of central importance to correlated and quantum materials. This is largely driven by the conceptual and theoretical ease to handle, predict, and understand highly uniform systems that exhibit complex interactions, symmetries, and band structures. In this Perspective, we highlight how flipping this paradigm has enabled exciting possibilities in the emerging field of high entropy materials, focusing primarily on high entropy oxide and chalcogenide quantum materials. These materials host high levels of cation or anion compositional disorder while maintaining unexpectedly uniform single crystal lattices. The diversity of atomic scale interactions of spin, charge, orbital, and lattice degrees of freedom are found to emerge into coherent properties on much larger length scales. Thus, altering the variance and magnitudes of the atomic scale properties through elemental selection can open new routes to tune global correlated phases, such as magnetism, metal-insulator transitions, ferroelectricity, and even emergent topological responses. The strategy of embracing disorder in this way provides a much broader pallet from which functional states can be designed for next-generation microelectronic and quantum information systems. © 2024 Author(s).
| Item Type: | Journal Article |
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| Publication: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| Additional Information: | The copyright for this article belongs to authors. |
| Keywords: | Degrees of freedom (mechanics); Metal insulator boundaries; Metal insulator transition; Microelectronics; Quantum optics; Semiconductor insulator boundaries; Single crystals, Atomic-scale interaction; Compositional disorder; Condensed-matter physics; Intrinsic disorder; Lattice degree of freedom; Materials design; Orbital degree of freedom; Spin degrees of freedom; Spin lattices; Spin-orbitals, Entropy |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 14 Aug 2024 12:13 |
| Last Modified: | 14 Aug 2024 12:13 |
| URI: | http://eprints.iisc.ac.in/id/eprint/85453 |
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