On the Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs

Mir, MA and Thakare, A and Munshi, MA and Avinash, V and Wani, S and Khan, Z and Chaudhuri, R and Karthik, S and Malik, R and Joshi, V and Shrivastava, M (2024) On the Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium, IRPS 2024, 14 April 2024through 18 April 2024, Grapevine.

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Abstract

In this work, we report an improvement in the device's threshold voltage, off-state voltage handling capability, and dynamic ON resistance behavior with stress engineering in the passivation layer. Engineering the passivation stress to a higher compressive value, resulted in a 500mV positive Vthshift, enhanced DC breakdown voltage by 105V, and reduced dynamic ON resistance from 1000to 12. Detailed electroluminescence and thermo-reflectance analysis established the observed improvement in dynamic ON resistance to be caused by the modulation of channel electric field due to intrinsic stress in the passivation layer. © 2024 IEEE.

Item Type:	Conference Paper
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Aluminum gallium nitride; Electroluminescence; Gallium nitride; High electron mobility transistors; III-V semiconductors; Threshold voltage, AlGaN/GaN HEMTs; AlGaN/GaN-HEMT; Device performance; Dynamic ON resistance; GaN buffer; GaN buffer trap; Passivation layer; Stress engineering; Surface passivation; Voltage-off state, Passivation
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	13 Aug 2024 09:43
Last Modified:	13 Aug 2024 09:43
URI:	http://eprints.iisc.ac.in/id/eprint/85282

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