Shah, AA and Verma, R and Chaudhuri, RR and Bashir Dar, A and Kumar, J and Rai, AK and Chattaraj, S and Shrivastava, M (2024) Electric Field Coupled Molecular Dynamic Insights into Anisotropic Reliability Issues of Monolayer MoS2 Based 2D FETs. In: IEEE International Reliability Physics Symposium, IRPS 2024, 14 April 2024through 18 April 2024, Grapevine.
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Abstract
Utilizing novel 2D materials for sub-5 nm nodes has become a choice for semiconductor industries due to the degraded performance of silicon in these ultra-scaled nodes. However, the reliability concerns in 2D materials remain to be addressed yet. In this work, for the first time, we report an in-plane electric field coupled molecular dynamics (MD) to investigate the impact of electric field and Joule's heating at an atomic level in 2D monolayer Mos2.The results indicate a breakdown vulnerability in the zigzag direction at a lower electric field than in the armchair direction under similar conditions. Moreover, it is observed that a high voltage ramp rate (dV/dt) and Joule's heating enhance tensile strain of Mo-S bonds which further lowers the breakdown field of Mos2.This work provides atomistic insights into dynamics of Mos2and implications of its anisotropic nature on its reliability in 2D FETs. © 2024 IEEE.
Item Type: | Conference Paper |
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Publication: | IEEE International Reliability Physics Symposium Proceedings |
Publisher: | Institute of Electrical and Electronics Engineers Inc. |
Additional Information: | The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc. |
Keywords: | Anisotropy; Electric fields; Layered semiconductors; Molybdenum compounds; Monolayers; Reliability; Semiconductor device manufacture; Sulfur compounds; Tensile strain, 2d material; Atomic levels; Breakdown; Condition; Degraded performance; Electric-field coupling; High-voltages; In-plane electric fields; Joules heating; Semiconductor industry, Molecular dynamics |
Department/Centre: | Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) |
Date Deposited: | 13 Aug 2024 09:35 |
Last Modified: | 13 Aug 2024 09:35 |
URI: | http://eprints.iisc.ac.in/id/eprint/85281 |
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