Growth of $InSb_{(1-x)}Bi_x$ crystals by rotatory Bridgman method and their characterization

Dixit, VK and Rodrigues, BV and Bhat, HL (2000) Growth of $InSb_{(1-x)}Bi_x$ crystals by rotatory Bridgman method and their characterization. In: Journal of Crystal Growth, 217 (1-2). pp. 40-46.

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Abstract

The rotatory Bridgman method was used to grow ternary $InSb_{(1-x)}Bi_x$ crystals. In this method the ampoule was subjected to ACRT like reversible rotation at a peak rate of 60 rpm. High-quality crystals of 8mm diameter and 25mm length were grown with 6.54 atomic percentage of Bi. The grown crystals were characterized employing various techniques such as energy-dispersive X-ray analysis, X-ray diffraction, differential scanning calorimetery, infrared spectroscopy and Hall measurement.

Item Type:	Journal Article
Publication:	Journal of Crystal Growth
Publisher:	Elsevier
Additional Information:	Copyright of this article belongs to Elsevier.
Keywords:	Crystal growth;Rotatoty Bridgman method;InSb(1-x)Bix;ACRT;LWIR
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	05 Sep 2006
Last Modified:	19 Sep 2010 04:30
URI:	http://eprints.iisc.ac.in/id/eprint/8118

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