Exposure of InP to hydrogen plasma in the presence of -a 'sacrificial' InP-an x-ray photoelectron spectroscopic study

Balasubramanian, Sathya and Gopinath, CS and Subramanian, S and Balasubramanian, N (1994) Exposure of InP to hydrogen plasma in the presence of -a 'sacrificial' InP-an x-ray photoelectron spectroscopic study. In: Semiconductor Science and Technology, 9 (9). pp. 1604-1607.

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Abstract

X-ray photoelectron spectroscopic (XPS) studies of inP surfaces subjected to a new method of hydrogen plasma treatment are reported here. The XPS analysis shows that the usually observed phosphorus loss can be reduced by the use of a 'sacrificial' inP immersed in the hydrogen plasmawith the test InP Sample kept away from the electrodes in the downstream. The resuits suggest that the 'sacrificial' inP loses P during theH plasma exposureand thus becomes a source of P to compensate for the loss suffered by the test InP kept downstream.

Item Type:	Journal Article
Publication:	Semiconductor Science and Technology
Publisher:	Institute of Physics
Additional Information:	Copyright of this article belongs to Institute of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	06 Jul 2006
Last Modified:	19 Sep 2010 04:30
URI:	http://eprints.iisc.ac.in/id/eprint/7923

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