Transport, optical and magnetotransport properties of hetero-epitaxial In$As_xSb_{1-x}/GaAs(x\leq0.06)$ and bulk In$As_xSb_{1-x} (x\leq0.05)$ crystals: experiment and theoretical analysis

Bansal, Bhavtosh and Dixit, VK and Venkataraman, V and Bhat, HL (2004) Transport, optical and magnetotransport properties of hetero-epitaxial In$As_xSb_{1-x}/GaAs(x\leq0.06)$ and bulk In$As_xSb_{1-x} (x\leq0.05)$ crystals: experiment and theoretical analysis. In: Physica E: Low-dimensional Systems and Nanostructures, 20 (3-4). pp. 272-277.

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Abstract

We briefly review the growth and structural properties of $InAs_xSb_{1-x} (x\leq0.05)$ bulk single crystals and $InAs_xSb_{1-x} (x\leq0.06)$ epitaxial films grown on semi-insulating GaAs substrates. Temperature-dependent transport measurements on these samples are then correlated with the information obtained from structural (XRD, TEM, SEM) and optical (FTIR absorption) investigations. The temperature dependence of mobility and the Hall coefficient are theoretically modelled by exactly solving the linearized Boltzmann transport equation by inversion of the collision matrix and the relative role of various scattering mechanisms in limiting the low temperature and 300 K mobility is estimated. Finally, the first observation of Shubnikov oscillations in In AsSb is discussed.

Item Type:	Journal Article
Publication:	Physica E: Low-dimensional Systems and Nanostructures
Publisher:	Elsevier
Additional Information:	The copyright belongs to Elsevier.
Keywords:	InAsSb;InSb;Narrow gap semiconductors;Magnetotransport;Hall mobility;Boltzmann equation
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	30 May 2006
Last Modified:	19 Sep 2010 04:27
URI:	http://eprints.iisc.ac.in/id/eprint/7136

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