A Technique for Modeling and Simulating Transistor Based MEMS Sensors

Martha, P and Sebastian, A and Seena, V and Kadayinti, N (2021) A Technique for Modeling and Simulating Transistor Based MEMS Sensors. In: 8th IEEE International Symposium on Inertial Sensors and Systems, INERTIAL 2021, 22-25 Mar 2020, Kailua-Kona.

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Abstract

MEMS inertial sensors are used in handheld smart devices such as smartphones and smart watches to detect and monitor physical activities. The most common transduction techniques used are based on piezoelectric 1, piezoresistive 2 or capacitive 3 techniques. The performance of these sensors is limited by passive detection, the need of a functional material, area of electrode, converter and amplifier circuits in the front end of read-out network. Suspended gate FET (SGFET) based sensors are being investigated as an alternative type of inertial sensor that offers in-built amplification as well as eliminates the aforementioned limitations. The suspended gate SGFET is an active transducer and has the potential for monolithic integration with CMOS. © 2021 IEEE.

Item Type:	Conference Paper
Publication:	INERTIAL 2021 - 8th IEEE International Symposium on Inertial Sensors and Systems, Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Functional materials, Active transducers; Amplifier circuits; MEMS inertial sensors; Modeling and simulating; Monolithic integration; Passive detection; Physical activity; Suspended gate fets, Inertial navigation systems
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	26 Aug 2021 05:56
Last Modified:	26 Aug 2021 05:56
URI:	http://eprints.iisc.ac.in/id/eprint/69345

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