Annealing temperature-dependent structural and electrical properties of (Ta2O5)1-x - (TiO2)x thin films, x � 0.11

Thapliyal, P and Kandari, AS and Lingwal, V and Panwar, NS and Rao, GM (2021) Annealing temperature-dependent structural and electrical properties of (Ta2O5)1-x - (TiO2)x thin films, x � 0.11. In: Ceramics International . (In Press)

PDF Ceramics International.pdf - Accepted Version Restricted to Registered users only Download (4MB) | Request a copy

Abstract

(Ta2O5)1-x- (TiO2)x (TTOx) thin films, with x = 0, 0.03, 0.06, 0.08, and 0.11, were deposited using magnetron direct current (DC) sputtering method onto the P/boron-silicon (1 0 0) substrates by varying areas of Tantalum and Titanium metallic targets, in oxygen environment at ambient temperature. The as-deposited thin films were annealed at temperatures ranging from 500 to 800 °C. Generally, the formation of the Ta2O5 structure was observed from the X-ray diffraction measurements of the annealed films. The capacitance of prepared metal� oxide� semiconductor (MOS) structures of Ag/TTOx/p-Si was measured at 1 MHz. The dielectric constant of the deposited films was observed altering with varying composition and annealing temperature, showing the highest value 71, at 1 MHz, for the TTOx films, x = 0.06, annealed at 700 °C. With increasing annealing temperature, from 700 to 800 °C, the leakage current density was observed, generally decreasing, from 10�5 to 10�8 A cm�2, for the prepared compositions. Among the prepared compositions, films with x = 0.06, annealed at 800 °C, having the observed value of dielectric constant 48, at 1 MHz; and the leakage current density 2.7 � 10�8 A cm�2, at the electric field of 3.5 � 105 V cm�1, show preferred potential as a dielectric for high-density silicon memory devices. © 2021 Elsevier Ltd and Techna Group S.r.l.

Item Type:	Journal Article
Publication:	Ceramics International
Publisher:	Elsevier Ltd
Additional Information:	Copyright to this article belongs to Elsevier Ltd
Keywords:	Annealing; Electric fields; Film preparation; High-k dielectric; Magnetrons; Oxide minerals; Tantalum oxides; Titanium dioxide, Annealing temperatures; As-deposited thin films; Deposited films; Direct current sputtering; Metallic targets; Observed values; Structural and electrical properties; X-ray diffraction measurements, Thin films
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	05 Feb 2021 10:56
Last Modified:	05 Feb 2021 10:56
URI:	http://eprints.iisc.ac.in/id/eprint/67875

Actions (login required)

View Item