Kumar, D and Krishnan, NS and Ilango, MS and Ramasesha, SK (2020) Device simulations of a novel nanostructured CdS/CdTe solar cell with back contacts. In: Journal of Computational Electronics .
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Abstract
Device simulations of a novel nanopillar-based n-CdS/p-CdTe solar cell with back contacts are carried out using the SILVACO technology computer-aided design (TCAD) device simulator. The device consists of nanopillars of CdTe coated with a very thin layer of CdS. It is shown that, for nanopillars with increasing height but given width as well as increasing width and given height, device performance parameters such as the open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor, and solar cell conversion efficiency (η) increase. However, there is an optimum number of nanopillars that can be integrated into a given device area, while integration of more or fewer than this optimum value will deteriorate the device performance. © 2020, Springer Science+Business Media, LLC, part of Springer Nature.
Item Type: | Journal Article |
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Publication: | Journal of Computational Electronics |
Publisher: | Springer |
Additional Information: | The copyright of this article belongs to Springer |
Keywords: | Cadmium sulfide; Cadmium telluride; Electronic design automation; II-VI semiconductors; Nanopillars; Open circuit voltage, CdS/CdTe solar cells; Cell conversion efficiency; Device performance; Device simulations; Device simulators; Nano-structured; Optimum number; Technology computer aided design, Cadmium sulfide solar cells |
Department/Centre: | Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering |
Date Deposited: | 15 Mar 2021 07:00 |
Last Modified: | 15 Mar 2021 07:00 |
URI: | http://eprints.iisc.ac.in/id/eprint/67484 |
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