A Lithography-Free Fabrication of Low-Operating Voltage-Driven, Very Large Channel Length Graphene Field-Effect Transistor with NH3Sensing Application

Chourasia, NK and Singh, AK and Rai, S and Sharma, A and Chakrabarti, P and Srivastava, A and Pal, BN (2020) A Lithography-Free Fabrication of Low-Operating Voltage-Driven, Very Large Channel Length Graphene Field-Effect Transistor with NH3Sensing Application. In: IEEE Transactions on Electron Devices, 67 (10). pp. 4385-4391.

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Abstract

Large-area-based field-effect transistor (FET) gas sensor has the potential to provide a larger sensing area for a chemical analyte. So far, graphene FETs (GFETs) are mostly fabricated by expensive lithographic techniques with a minimum channel length. We have demonstrated a simple way to fabricate a very large channel length of 0.45 mm GFET using ion-conducting dielectric with thermally evaporate source/drain electrodes and has been demonstrated for an application of ambient atmosphere ammonia gas sensing. Ion-conducting Li5AlO4 gate dielectric has reduced operating voltage up to 2.0 V with good current saturation. The chemical vapor deposition (CVD) grown uniform monolayer of graphene has been used as an active channel layer of FET. The fabricated device has been tested for different concentrations of ammonia in ambient environment conditions at 25 °C temperature, which indicates that the Dirac point voltage of the device varies up to 0.8 V when the concentration of ammonia has been changed from 0 to 3 ppm. Moreover, this study also reveals that this GFET is capable of detecting ammonia up to the concentration level of 0.1 ppm. © 1963-2012 IEEE.

Item Type:	Journal Article
Publication:	IEEE Transactions on Electron Devices
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Aluminum compounds; Ammonia; Chemical analysis; Chemical vapor deposition; Fabrication; Field effect transistors; Gas detectors; Gas sensing electrodes; Gate dielectrics; Graphene; Lithium compounds; Lithography, Active channel layers; Ambient environment; Chemical vapor depositions (CVD); Concentration levels; Dirac point voltages; Graphene field-effect transistors; Low operating voltage; Source/drain electrodes, Graphene transistors
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited:	23 Nov 2020 09:39
Last Modified:	23 Nov 2020 09:39
URI:	http://eprints.iisc.ac.in/id/eprint/66900

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