Alcohol-Based Sulfur Treatment for Improved Performance and Yield in Local Back-Gated and Channel-Length-Scaled MoS FETs

Sanjay, S and Sahoo, K and Bhat, N (2020) Alcohol-Based Sulfur Treatment for Improved Performance and Yield in Local Back-Gated and Channel-Length-Scaled MoS FETs. In: IEEE Transactions on Electron Devices, 67 (9). pp. 3711-3715.

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Abstract

Achieving good ohmic contacts, with minimum variability, has remained a challenge for field-effect transistors (FETs) using molybdenum disulfide (MoS2). Surface state engineering using ammonium sulfide is a great way to obtain superior and reliable contacts on MoS2 using high-work-function metals such as nickel. However, the process is aggressive to thin gate dielectrics hampering device yield. We report on an improved sulfur treatment process in an alcoholic medium that is less aggressive to thin gate dielectrics and offers a record low Schottky barrier height of 131 meV on Ni-MoS2 contacts. We demonstrate the suitability of this process with channel length scaling ( L\text G from 500 to 80 nm) on global back-gated FETs with a record low contact resistance of 1.3~\text kØmega ⋅ μ \text m for 80-nm FET. We also demonstrate the compatibility of the proposed process with local back-gated FETs on thin high- k HfO2 gate dielectrics, which is crucial for scalable process integration in realizing integrated circuits on 2-D materials. © 1963-2012 IEEE.

Item Type:	Journal Article
Publication:	IEEE Transactions on Electron Devices
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright of this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Dielectric materials; Gate dielectrics; Hafnium oxides; Layered semiconductors; Molybdenum compounds; MOSFET devices; Nickel compounds; Ohmic contacts; Schottky barrier diodes; Sulfur; Sulfur compounds, Ammonium sulfide; Field effect transistor (FETs); HfO2 gate dielectrics; High-work-function metal; Molybdenum disulfide; Process integration; Schottky barrier heights; Sulfur treatment, Vanadium compounds
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	24 Dec 2020 06:07
Last Modified:	24 Dec 2020 06:07
URI:	http://eprints.iisc.ac.in/id/eprint/66676

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