Nanowaveguide Designs in 220-nm SOI for Ultra-Broadband FWM at Telecom Wavelengths

Sharma, S and Kumar, V and Rawat, P and Ghosh, J and Venkataraman, V (2020) Nanowaveguide Designs in 220-nm SOI for Ultra-Broadband FWM at Telecom Wavelengths. In: IEEE Journal of Quantum Electronics, 56 (5).

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Abstract

We present optimal designs for nanowaveguides on standard 220-nm SOI platform yielding ultra-broadband phase-matching over bandwidths >500-nm spanning the entire telecommunication spectrum (O-, E-, S-, C-, L-, U- bands, 1250-1750 nm) for degenerate-pump four-wave mixing (FWM). A complete study of FWM bandwidth as a function of waveguide dimensional parameters like width, etching depth and sidewall slant-angle is presented. Extensive numerical mode simulations show that the proposed device designs exhibit promising tolerances towards fabrication inaccuracies. These designs can be used for WDM (wavelength division multiplexing) systems in classical optical communication and/or broadband photon-pair sources for multi-channel quantum communication. © 1965-2012 IEEE.

Item Type:	Journal Article
Publication:	IEEE Journal of Quantum Electronics
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	Copy right for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Bandwidth; Etching; Optical communication; Phase matching; Quantum communication; Ultra-wideband (UWB), Device design; Dimensional parameters; Etching depth; Nanowaveguides; Numerical mode; Optimal design; Telecom wavelengths; Ultra-broadband, Four wave mixing
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	06 Nov 2020 11:43
Last Modified:	06 Nov 2020 11:43
URI:	http://eprints.iisc.ac.in/id/eprint/66141

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