Polymorphic In-Plane Heterostructures of Monolayer WS2 for Light-Triggered Field-Effect Transistors

Kumar, P and Thakar, K and Verma, NC and Biswas, J and Maeda, T and Roy, A and Kaneko, K and Nandi, CK and Lodha, S and Balakrishnan, V (2020) Polymorphic In-Plane Heterostructures of Monolayer WS2 for Light-Triggered Field-Effect Transistors. In: ACS Applied Nano Materials, 3 (4). pp. 3750-3759.

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Abstract

The realization of next-generation transition-metal dichalcogenide based nanoscale devices demands stringent control over coherent in-plane heterostructures of atomically thin monolayers with exceptional properties. In this paper, we report atmospheric-pressure chemical vapor deposition growth of large-domain, coherent polymorphic in-plane heterostructures of monolayer WS2 on a SiO2/Si substrate with intriguing optical and electronic properties. The formation of in-plane heterostructures with 1H and 1T polymorphs was extensively analyzed using a variety of spectroscopic as well as microscopic techniques, along with lifetime luminescence imaging. High-angle annular dark-field scanning transmission electron microscopy revealed coexistence of the heterophases in monolayer WS2 heterostructures. Back-gated photoconductivity measurements in nanoscale field-effect-transistor device geometry and the rational design of a WS2 heterostructure pattern demonstrate optoelectronic applications. Copyright © 2020 American Chemical Society.

Item Type:	Journal Article
Publication:	ACS Applied Nano Materials
Publisher:	American Chemical Society
Additional Information:	Copyright of this article belongs to American Chemical Society
Keywords:	Atmospheric pressure; Chemical vapor deposition; Electronic properties; High resolution transmission electron microscopy; Indium compounds; Monolayers; Nanotechnology; Scanning electron microscopy; Silica; Silicon; Substrates; Transition metals; Tungsten compounds, Atmospheric pressure chemical vapor deposition; High-angle annular dark fields; Luminescence imaging; Microscopic techniques; Nanoscale field-effect transistors; Optical and electronic properties; Optoelectronic applications; Transition metal dichalcogenides, Field effect transistors
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	15 Apr 2021 06:38
Last Modified:	15 Apr 2021 06:38
URI:	http://eprints.iisc.ac.in/id/eprint/65611

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