Gate-Controllable Electronic Trap Detection in Dielectrics

Mondal, S and Paul, T and Ghosh, A and Venkataraman, V (2020) Gate-Controllable Electronic Trap Detection in Dielectrics. In: IEEE Electron Device Letters, 41 (5). pp. 717-720.

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Abstract

Gate controllable electronic trap detection method has been demonstrated by regulating the gate potential of MIS devices. This method is based on shift of capacitance-voltage (CV) curve as well as flatband voltage ( textV-textFB ) measure in < 10mu texts due to injection or ejection of electrons through the metal gate. Using this method, an electronic trap energy distribution was measured in the HfO2 dielectric film and it confirms a maximum number of traps ( Delta textN-textT ) of 1.7times 1012 cm -2 corresponding to an energy level ( Delta textE-textIL ) of 0.45 eV above silicon conduction band (Si- textE-text CB ). In comparison, ZrO2-based MIS devices showed a broader distribution of electronic traps throughout the band gap. However, HfO2 contained more than 60 traps in deep level compared to 50 in ZrO2, which establishes the effects of material variation. © 1980-2012 IEEE.

Item Type:	Journal Article
Publication:	IEEE Electron Device Letters
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	Copy right for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Capacitance; Dielectric films; Energy gap; Hafnium oxides; MIS devices; Zirconia, Capacitance voltage; Detection methods; Effects of materials; Electronic traps; Flat-band voltage; Gate potentials; HfO2 dielectric; Metal gate, Gate dielectrics
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	14 Oct 2020 10:24
Last Modified:	14 Oct 2020 10:24
URI:	http://eprints.iisc.ac.in/id/eprint/65422

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