Effect of Er doping on the ammonia sensing properties of ZnO thin films prepared by a nebulizer spray technique

Arun Kumar, KD and Valanarasu, S and Ponraj, JS and Fernandes, BJ and Shkir, M and AlFaify, S and Murahari, P and Ramesh, K (2020) Effect of Er doping on the ammonia sensing properties of ZnO thin films prepared by a nebulizer spray technique. In: Journal of Physics and Chemistry of Solids, 144 .

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Abstract

Erbium (Er)-doped ZnO thin films were deposited on glass substrates by nebulizer spray pyrolysis with different doping concentrations (0 wt, 1 wt, 3 wt and 5 wt). The deposited films are polycrystalline with a hexagonal structure with a (002) predominant plane. The Er-doped ZnO films have greater surface roughness than the undoped ZnO film. The optical transmittance of the undoped ZnO film is about 80 in the visible range. The optical bandgap of the undoped ZnO thin film is 3.29 eV, which is very close to the bulk ZnO. From photoluminescence spectra, sharp UV emission is observed at 385 nm for all the prepared films. The response of the films to ammonia (NH3) vapour is high when the Er concentration is 3 or less, and for higher concentrations of Er, the response is low. All the deposited Er-doped ZnO films show short response time and recovery time with regard to NH3.

Item Type:	Journal Article
Publication:	Journal of Physics and Chemistry of Solids
Publisher:	Elsevier
Additional Information:	The copyright for his article belogs to Elsevier.
Keywords:	Ammonia; Chemical sensors; Erbium; Film preparation; II-VI semiconductors; Metallic films; Photoluminescence; Semiconductor doping; Spray pyrolysis; Substrates; Surface roughness; Thin films; Zinc oxide, Doped ZnO thin films; Doping concentration; Er concentrations; Glass substrates; Hexagonal structures; Photoluminescence spectrum; Polycrystalline; Short response time, Optical films
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	25 Jun 2021 04:04
Last Modified:	25 Jun 2021 04:04
URI:	http://eprints.iisc.ac.in/id/eprint/65340

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