Design and Implementation of 1.5 kW Half Bridge Bidirectional DC-DC Converter based on Gallium Nitride devices

Gurudiwan, S and Roy, SK and Basu, K (2019) Design and Implementation of 1.5 kW Half Bridge Bidirectional DC-DC Converter based on Gallium Nitride devices. In: 2019 National Power Electronics Conference (NPEC), 13-15 Dec. 2019, Tiruchirappalli, India.

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Abstract

Use of wide band gap devices such as SiC MOSFET and GaN HEMT in a converter results in high power density and high efficiency as compared to state of the art Si switches. The objective of this work is to build a 350V DC (input), 1.5kW buck converter with switching frequency 100kHz. Commercially available GaN devices are compared based on performance in terms of package, conduction and switching losses. The module achieves more than 97 efficiency at all values of the current. © 2019 IEEE.

Item Type:	Conference Paper
Publication:	2019 National Power Electronics Conference, NPEC 2019
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	cited By 0; Conference of 2019 National Power Electronics Conference, NPEC 2019 ; Conference Date: 13 December 2019 Through 15 December 2019; Conference Code:158564
Keywords:	Bridges; Efficiency; Energy gap; Gallium nitride; III-V semiconductors; MOSFET devices; Power electronics; Silicon; Silicon carbide; Silicon compounds; Switching frequency; Wide band gap semiconductors, Buck converters; Design and implementations; Half-bridge bidirectional; High power density; High-efficiency; State of the art; Switching loss; Wide band gap devices, DC-DC converters
Department/Centre:	Division of Electrical Sciences > Electrical Engineering
Date Deposited:	21 Sep 2020 08:51
Last Modified:	21 Sep 2020 08:51
URI:	http://eprints.iisc.ac.in/id/eprint/65200

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