Low temperature PECVD deposited Silicon Nitride grating couplers with high efficiency

Nambiar, S and Kumar, A and Kallega, R and Ranganath, P and Selvaraja, SK (2019) Low temperature PECVD deposited Silicon Nitride grating couplers with high efficiency. In: 2019 Workshop on Recent Advances in Photonics (WRAP), 13-14 Dec. 2019, Guwahati, India.

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Abstract

We report and demonstrate high efficiency grating couplers on PECVD deposited Silicon Nitride films. The couplers were fabricated on a 400 nm thick film that was embedded in a SiO2 cladding. The experimentally measured coupling efficiency was -5.6 dB per coupler for gratings on a Silicon substrate and -2.58 dB per coupler for gratings with a bottom Bragg reflector. The reported efficiencies are comparable to similarly deposited stacks using LPCVD based processes. © 2019 IEEE.

Item Type:	Conference Paper
Publication:	2019 Workshop on Recent Advances in Photonics, WRAP 2019
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	cited By 0; Conference of 2019 Workshop on Recent Advances in Photonics, WRAP 2019 ; Conference Date: 13 December 2019 Through 14 December 2019; Conference Code:158197
Keywords:	Efficiency; Nitrides; Plasma enhanced chemical vapor deposition; Silica; Silicon nitride; Temperature; Thick films; Waveguides, Coupling efficiency; Deposited silicon nitride films; Grating couplers; High-efficiency; Low temperatures; Silicon substrates, Silicon oxides
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	14 Sep 2020 11:03
Last Modified:	14 Sep 2020 11:03
URI:	http://eprints.iisc.ac.in/id/eprint/65084

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