Emergence of electron-phonon coupling in a dual topological insulator BiTe

Mallick, D and Mandal, S and Bitla, Y and Ganesan, R and Kumar, PSA (2019) Emergence of electron-phonon coupling in a dual topological insulator BiTe. In: Materials Research Express, 6 (12).

PDF mat_res_exp_06-12_2019.pdf - Published Version Restricted to Registered users only Download (1MB) | Request a copy

Abstract

A versatile van der Waals epitaxy of BiTe, a newly discovered dual TI and a predicted higher order topological insulator (HOTI) thin film on muscovite mica is demonstrated using pulsed laser deposition. Topographic, structural and XPS analyses confirm the chemical homogeneity and high crystalline quality with large-Area coverage with atomically smooth surface. The magneto transport data reveals weak anti-localization and electron-electron interaction driven insulating ground state with n-Type character. An elaborate thickness, temperature and magnetic field dependence of transport data indicates a transition from coupled, partially coupled and fully decoupled surface states wherein 3D electron-electron and electron-phonon scatterings play significant role in dephasing mechanism, unlike 2D electron-electron dephasing in most TIs. Also from the fitting of the resistivity upturn we found that the coulomb screening factor (F) in thicker samples turns out to be negative which indicates the presence of the electron phonon coupling in those samples. © 2019 IOP Publishing Ltd.

Item Type:	Journal Article
Publication:	Materials Research Express
Publisher:	Institute of Physics Publishing
Additional Information:	The copyright of this article belongs to Institute of Physics Publishing
Keywords:	Chemical analysis; Electric insulators; Electron correlations; Electron-electron interactions; Electron-phonon interactions; Ground state; Mica; Pulsed laser deposition; Screening; Topological insulators; Van der Waals forces, Atomically smooth surface; Chemical homogeneity; Coherence lengths; Electron phonon couplings; Electron phonon scattering; High-crystalline quality; Magnetic field dependences; Van der Waals epitaxy, Electrons
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	18 Jun 2020 10:00
Last Modified:	18 Jun 2020 10:00
URI:	http://eprints.iisc.ac.in/id/eprint/65016

Actions (login required)

View Item