Influence of low energy Ag ion irradiation for formation of Bi2Se3 phase from Bi/GeSe2 heterostructure thin films

Aparimita, A and Naik, R and Sahoo, S and Sripan, C and Ganesan, R (2020) Influence of low energy Ag ion irradiation for formation of Bi2Se3 phase from Bi/GeSe2 heterostructure thin films. In: Applied Physics A: Materials Science and Processing, 126 (3).

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Abstract

The manuscript reports on the influence of 40 keV Ag �ve ion bombardment with different fluences on the microstructural and optical properties of thermally evaporated Bi/GeSe2 bilayer thin films. Two different fluences (5 � 1014 ions cm�2 and 1 � 1015 ions cm�2) of Ag �ve ions were used to irradiate the thin films that changed the microstructure and optical properties as studied by different spectroscopic methods like X-ray diffraction method (XRD), Energy dispersive X-ray spectroscopy (EDS), Field emission scanning electron microscopy (FESEM), Atomic force microscopy (AFM), Raman spectroscopy, and UV�Vis spectroscopy. The evolution of topological Bi2Se3 phase occurs after ion irradiated diffusion of Bi into GeSe2 matrix. The optical parameters as calculated from the transmission spectra infers the indirect allowed transition with reduction of Eg on ion irradiation. The various optical parameters like absorption coefficient (α), optical energy gap (Eg), Tauc parameter (B1/2), Urbach energy (Ee), extinction coefficient (k), refractive index (n) were modified with ion irradiation. The surface morphology is being changed after irradiation as probed by AFM and FESEM. The Raman spectra support the formation of Bi2Se3 phase with irradiation. The obtained results have been explained on the basis of increase in band tailing of valence band due to defect states caused by the irradiation. © 2020, Springer-Verlag GmbH Germany, part of Springer Nature.

Item Type:	Journal Article
Publication:	Applied Physics A: Materials Science and Processing
Publisher:	SPRINGER
Additional Information:	Copyright of this article belongs to SPRINGER
Keywords:	Band structure; Chalcogenides; Energy dispersive spectroscopy; Energy gap; Field emission microscopes; Germanium compounds; Inorganic compounds; Ion bombardment; Morphology; Optical emission spectroscopy; Optical properties; Optical variables control; Radiation; Refractive index; Scanning electron microscopy; Selenium compounds; Silver; Spectroscopic analysis; Surface morphology; Thin films, Absorption co-efficient; Energy dispersive X ray spectroscopy; Extinction coefficient (k); Field emission scanning electron microscopy; Low-energy ion irradiation; Spectroscopic method; Transmission spectrums; X-ray diffraction method, Optical films
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	05 Mar 2020 11:07
Last Modified:	05 Mar 2020 11:07
URI:	http://eprints.iisc.ac.in/id/eprint/64691

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