A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias

Remesh, N and Kumar, S and Guiney, I and Humphreys, CJ and Raghavan, S and Muralidharan, R and Nath, DN (2019) A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. In: Physica Status Solidi (A) Applications and Materials Science .

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Abstract

Leakage mediated by GaN buffer traps is identified and studied using a novel characterization technique. Through back-gating measurement, the effect of buffer trap states on the lateral leakage is determined by probing mesa-isolated Ohmic pads. Time-dependent leakage measurements are carried out to study the extent of the increase in buffer leakage due to the traps. It is observed that the mesa leakage is more prominent at very slow sweep rates and high substrate bias. The temperature-dependent measurements show that the mesa leakage and the substrate leakage are characterized by thermionic emission from the traps with an activation barrier of 0.34 and 0.2 eV, respectively.

Item Type:	Journal Article
Publication:	Physica Status Solidi (A) Applications and Materials Science
Publisher:	Wiley-VCH Verlag
Additional Information:	Copyright of this article belongs to Wiley-VCH Verlag
Keywords:	Aluminum gallium nitride; Electron mobility; Gallium nitride; III-V semiconductors; Silicon; Thermionic emission, Activation barriers; AlGaN; AlGaN/GaN high electron mobility transistors; Characterization techniques; Leakage measurements; Novel techniques; Temperature-dependent measurements; thermionic, High electron mobility transistors
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	11 Feb 2020 05:43
Last Modified:	11 Feb 2020 05:43
URI:	http://eprints.iisc.ac.in/id/eprint/64494

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