Madhavi, K and Ghosh, M and Mohan Rao, G and Padma Suvarna, R (2020) Surface modification influenced properties of silicon nanowires grown by Ag assisted chemical etching with ECR hydrogen plasma treatment. In: Journal of Materials Science: Materials in Electronics .
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Abstract
Silicon nanowires (SiNWs) are fabricated by Ag assisted chemical etching and are treated with hydrogen plasma created by electron cyclotron resonance (ECR) plasma system at 600 watts microwave power for various time durations (0�30 min). The hydrogen plasma exposure on the surface of the SiNWs reduced the surface roughness and increased the crystalline nature. SEM analysis revealed that the diameter of the SiNWs decreased on plasma exposure. The electrical conduction measurements suggested that the hydrogen plasma exposure for 5 min on the SiNW surface enhanced the electrical conductivity when compared to as fabricated SiNW surface. The hydrophobic nature of fabricated SiNWs was transformed to hydrophilic at plasma exposure for lower time duration. On plasma exposure of NWs for 30 min the sample turned hydrophobic. Study of different properties of the SiNWs before and after plasma treatment revealed that there is pronounced effect of plasma on the nature of SiNWs.
Item Type: | Journal Article |
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Publication: | Journal of Materials Science: Materials in Electronics |
Publisher: | Springer |
Additional Information: | Copyright of this article belongs to Springer |
Keywords: | Chemical modification; Cyclotrons; Electron cyclotron resonance; Etching; Hydrogen; Hydrophobicity; Nanowires; Plasma applications; Silicon; Silver; Surface roughness, Crystalline nature; Electrical conduction; Electrical conductivity; Electron cyclotron resonance plasma; Hydrogen plasma exposures; Hydrogen plasma treatments; Hydrophobic nature; Silicon nanowires, Silicon compounds |
Department/Centre: | Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics |
Date Deposited: | 29 Jan 2020 09:35 |
Last Modified: | 29 Jan 2020 09:35 |
URI: | http://eprints.iisc.ac.in/id/eprint/64418 |
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