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Highly Sensitive, Fast Graphene Photodetector with Responsivity >10(6) A/W Using a Floating Quantum Well Gate

Murali, Krishna and Abraham, Nithin and Das, Sarthak and Kallatt, Sangeeth and Majumdar, Kausik (2019) Highly Sensitive, Fast Graphene Photodetector with Responsivity >10(6) A/W Using a Floating Quantum Well Gate. In: ACS APPLIED MATERIALS & INTERFACES, 11 (33). pp. 30010-30018.

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Official URL: https://dx.doi.org/10.1021/acsami.9b06835

Abstract

Graphene, owing to its zero-band-gap electronic structure, is promising as an absorption material for ultrawideband photodetection applications. However, graphene-absorption-based detectors inherently suffer from poor responsivity because of weak absorption and fast photocarrier recombination, limiting their viability for low-intensity light detection. Here, we use a graphene/WS2/MoS2 vertical heterojunction to demonstrate a highly sensitive photodetector, where the graphene layer serves dual purposes, namely, as the light absorption layer and also as the carrier conduction channel, thus maintaining the broadband nature of the photodetector. A fraction of the photoelectrons in graphene encounter ultrafast interlayer transfer to a floating monolayer MoS2 quantum well, providing a strong quantum-confined photogating effect. The photodetector shows a responsivity of 4.4 X 10(6) A/W at 30 1W incident power, outperforming photodetectors reported till date where graphene is used as a light absorption material by several orders. In addition, the proposed photodetector exhibits an extremely low noise equivalent power of <4 fW/root Hz. and a fast response (similar to milliseconds) with zero reminiscent photocurrent. The findings are attractive toward the demonstration of a graphene-based highly sensitive, fast, broadband photodetection technology.

Item Type: Journal Article
Publication: ACS APPLIED MATERIALS & INTERFACES
Publisher: AMER CHEMICAL SOC
Additional Information: copyright for this article belongs to AMER CHEMICAL SOC
Keywords: graphene; MoS2; WS2; photodetection; photogating effect; van der Waals heterojunction
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 07 Nov 2019 06:02
Last Modified: 07 Nov 2019 06:02
URI: http://eprints.iisc.ac.in/id/eprint/63600

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