Model of GaSb-InAs p-i-n Gate All Around BioTunnel FET

Ajay, Ajay and Narang, Rakhi and Saxena, Manoj and Gupta, Mridula (2019) Model of GaSb-InAs p-i-n Gate All Around BioTunnel FET. In: IEEE SENSORS JOURNAL, 19 (7). pp. 2605-2612.

PDF IEE_SEN_JOU_19_7_2605_2019.pdf - Published Version Restricted to Registered users only Download (1MB) | Request a copy

Abstract

This paper investigates the role of a hetero-junction p-i-n gate all around tunnel FET architecture for biosensing applications. The device offers a better sensitivity and has been modeled in terms of various parameters such as surface potential, threshold voltage, and drain current. Analytical modeling scheme relates to the exact resultant solution of the two-dimensional Poisson equation. The shift in the threshold voltage has been considered as the sensing parameter to detect the sensitivity when the biomolecules are immobilized in the cavity region.

Item Type:	Journal Article
Publication:	IEEE SENSORS JOURNAL
Publisher:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Additional Information:	Copyright of this article belongs to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords:	Bio-sensor; dielectric modulation; gate all around tunnel FET (GAA-TFET); hetero junction (HJ); model
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	20 May 2019 06:12
Last Modified:	20 May 2019 06:12
URI:	http://eprints.iisc.ac.in/id/eprint/62396

Actions (login required)

View Item