Electrical switching behavior of bulk AgI-Ag2O-MoO3 glass with ON-state current and thickness

Tanujit, B and Varma, G Sreevidya and Rajanna, K and Asokan, S (2018) Electrical switching behavior of bulk AgI-Ag2O-MoO3 glass with ON-state current and thickness. In: International Conference on Advanced Materials and Applications (ICAMA), JUN 15-17, 2016, Bengaluru, INDIA, pp. 2705-2709.

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Abstract

Bulk AgI-Ag2O-MoO3 (50: 25: 25) glasses have been prepared by melt quenching method (Microwave heating and quenched between two heavy steel plates). The electrical switching experiments have been carried out using a Keithley Source Meter (model 2410) controlled by Lab VIEW 6i, on samples of thicknesses 0.1, 0.2 and 0.3 mm at different ON state currents (3 mA, 2 mA, 1 mA, 0.6 mA, 0.4 mA and 0.25 mA). The samples are found to exhibit fast memory switching. The power dissipation increases with both thickness and ON state current. The threshold voltage, V-TH increases with thickness; and for a given thickness, the V-TH decreases with increasing ON state current. A sample of thickness 0.1 mm exhibits near ideal memory switching with the least power dissipation for an ON state current of 0.25 mA. The samples studied can be used for fast switching applications with minimum power dissipation. (C) 2018 Published by Elsevier Ltd. Selection and Peer-review under responsibility of International Conference on Advanced Materials and Applications (ICAMA 2016).

Item Type:	Conference Proceedings
Publication:	MATERIALS TODAY-PROCEEDINGS
Publisher:	ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Additional Information:	Copy right for this article belong to ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	16 Apr 2018 20:09
Last Modified:	16 Apr 2018 20:09
URI:	http://eprints.iisc.ac.in/id/eprint/59601

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