Jaiswal, Piyush and Ul Muazzam, Usman and Pratiyush, Anamika Singh and Mohan, Nagaboopathy and Raghavan, Srinivasan and Muralidharan, R and Shivashankar, S A and Nath, Digbijoy N (2018) Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics. In: APPLIED PHYSICS LETTERS, 112 (2).
Full text not available from this repository. (Request a copy)Abstract
We report on the deposition of Ga2O3 on III-nitride epi-layers using the microwave irradiation technique. We also report on the demonstration of a Ga2O3 device: a visible-blind, deep-UV detector, with a GaN-based heterostructure as the substrate. The film deposited in the solution medium, at <200 degrees C, using a metalorganic precursor, was nanocrystalline. XRD confirms that the as-deposited film, when annealed at high temperature, turns to polycrystalline beta-Ga2O3. SEM shows the as-deposited film to be uniform, with a surface roughness of 4-5 nm, as revealed by AFM. Interdigitated metal-semiconductor-metal devices with Ni/Au contact exhibited a peak spectral response at 230 nm and a good visible rejection ratio. This demonstration of a deep-UV detector on the beta-Ga2O3/III-nitride stack is expected to open up possibilities of functional and physical integration of beta-Ga2O3 and GaN material families towards enabling next-generation high-performance devices by exciting band and heterostructure engineering. Published by AIP Publishing.
| Item Type: | Journal Article |
|---|---|
| Publication: | APPLIED PHYSICS LETTERS |
| Additional Information: | Copy right for this article belong to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA |
| Department/Centre: | Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering |
| Date Deposited: | 02 Mar 2018 15:03 |
| Last Modified: | 02 Mar 2018 15:03 |
| URI: | http://eprints.iisc.ac.in/id/eprint/58919 |
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