On-chip Non-intrusive Temperature Detection and Compensation of a Fully Integrated CMOS RF Power Amplifier

Gaggatur, Javed S and Raja, Immanuel and Banerjee, Gaurab (2017) On-chip Non-intrusive Temperature Detection and Compensation of a Fully Integrated CMOS RF Power Amplifier. In: 30th International Conference on VLSI Design / 16th International Conference on Embedded Systems (VLSID), JAN 07-11, 2017, Hyderabad, INDIA, pp. 21-26.

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Abstract

A non intrusive temperature sensing based performance compensation of an integrated CMOS power amplifier is presented here. A differential-amplifier based temperature sensor, having an area of 25 mu m x 25 mu m, is used to measure the temperature around the RF circuits. The sources of temperature increase are analyzed and their contribution to self heating are presented. The effects of self heating and thermal coupling in RF circuits is demonstrated using an power amplifier. The integrated Class-E power amplifier was designed in 0.13 mu m CMOS Mixed Mode/RF process. The PA output variation due to self heating was reduced by 40%. The technique shows promise for compensation and correction in high frequency operating systems like millimeter-wave circuits where variations due to self-heating can vary the functional operation greatly.

Item Type:	Conference Proceedings
Series.:	International Conference on VLSI Design
Additional Information:	Copy right for this article belongs to the IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	08 Jul 2017 07:23
Last Modified:	08 Jul 2017 07:23
URI:	http://eprints.iisc.ac.in/id/eprint/57329

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