SiOx containing diamond like carbon coatings: Effect of substrate bias during deposition

Barve, SA and Chopade, SS and Kar, R and Chand, N and Deo, MN and Biswas, A and Patel, NN and Rao, GM and Patil, DS and Sinha, S (2017) SiOx containing diamond like carbon coatings: Effect of substrate bias during deposition. In: DIAMOND AND RELATED MATERIALS, 71 . pp. 63-72.

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Abstract

SiOx containing diamond like carbon (DLC) films have been deposited on silicon and stainless steel substrates under varying influence of RF self bias (-25 to -225V) using a capacitively coupled RF generated plasma of argon (Ar), methane (CH4) and hexamethyl disiloxane (HMDSO) gases. The deposited coatings have been characterized by load depth sensing nano indentation, spectroscopic elliposometry, X-ray photoelectron spectroscopy, Fourier transform infra-red spectroscopy and Raman spectroscopy. Plasma has also been characterized by emissive probe and results indicate that impinging ion energy is mainly controlled by the self-bias values in this case. Characterization of deposited films indicate that sp(3) bonded carbon content in the films is increasing with the RF self bias values on the substrates. A clear improvement in the optical, mechanical properties of the deposited films is seen with the increasing magnitude of RF self-bias. It is seen that with increasing magnitude of bias values, C content increases continuously in these films at the expanse of Si and O content and they finally got close towards ideal diamond like character beyond -150V bias values. (C) 2016 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Publication:	DIAMOND AND RELATED MATERIALS
Publisher:	ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND
Additional Information:	Copy right for this article belongs to the ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	09 Mar 2017 04:50
Last Modified:	01 Mar 2019 07:44
URI:	http://eprints.iisc.ac.in/id/eprint/56330

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