Prasad, KNN and Varma, Sreevidya G and Rukmani, K and Asokan, S (2015) Effect Of High Pressure On The Electrical Resistivity Of Ge-Te In Glasses. In: 59th DAE Solid State Physics Symposium, DEC 16-20, 2014, 59th DAE Solid State Physics Symposium.
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The variation in the electrical resistivity of the chalcogenide glasses Ge15Te85-x has been studied as a function of high pressure for pressures up to 8.5GPa. All the samples studied undergo a semi-conductor to metallic transition in a continuous manner at pressures between 1.5-2.5GPa. The transition pressure at which the samples turn metallic increases with increase in percentage of Indium. This increase is a direct consequence of the increase in network rigidity with the addition of Indium. At a constant pressure of 0.5GPa, the normalized resistivity shows some signature of the existence of the intermediate phase. Samples recovered after a pressure cycle remain amorphous suggesting that the semi-conductor to metallic transition arises from a reduction of the band gap due to pressure or the movement of the Fermi level into the conduction or valence band.
| Item Type: | Conference Proceedings |
|---|---|
| Series.: | AIP Conference Proceedings |
| Publisher: | AMER INST PHYSICS |
| Additional Information: | Copy right for this article belongs to the AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA |
| Keywords: | High pressure; electrical resistivity; chalcogenide glasses; semiconductor to metal transition |
| Department/Centre: | Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics |
| Date Deposited: | 14 Jan 2016 04:29 |
| Last Modified: | 14 Jan 2016 04:29 |
| URI: | http://eprints.iisc.ac.in/id/eprint/53120 |
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