Jali, VM and Angadi, Basavaraj and Lagare, MT and Victor, P and Kumar, Ravi and Krupanidhi, SB (2005) High Energy Oxygen Ion Induced Modifications in Ferroelectric $SrBi_{2}Ta_{2}O_{9}$ Thin Films. In: Ferroelectrics, 328 . pp. 103-109.
Full text not available from this repository. (Request a copy)Abstract
The effects of high energy oxygen ion irradiation on the ferroelectric properties of $SrBi_{2}Ta_{2}O_{9}$ (SBT) thin films are reported. The films were grown using pulsed laser ablation. Fluence dependant degradation in the ferroelectric properties was observed. The dielectric constant did not show any frequency dispersion in both the unirradiated and irradiated films. After irradiation, the films showed only a decrease in the capacitance value retaining their ferroelectric nature. The switching voltages increased with broader peaks and showed a partial recovery after annealing of the irradiated film. A slim hysteresis loop with decreased $P_{s}$, $P_{r}$ and $E_{c}$ values was observed. The current density increased to a larger extent. The decrease in the dielectric constant, capacitance and polarization values was to a lesser extent as compared to those of PZT thin films under identical irradiation conditions. The results presented in this paper are illustrative of the fact that the layered perovskites have a stable structure and are less sensitive to extrinsic effects. The relatively high resistance of bismuth layered perovskites such as SBT to the high energy radiation along with the greater fatigue endurance as compared to PZT make them better candidates for applications in memory devices.
Item Type: | Journal Article |
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Publication: | Ferroelectrics |
Publisher: | Taylor & Francis |
Additional Information: | Copyright for this article belongs to Taylor & Francis. |
Keywords: | Ferroelectric properties;ion bombardment;phase transitions and laser ablation |
Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
Date Deposited: | 02 Feb 2006 |
Last Modified: | 27 Aug 2008 11:43 |
URI: | http://eprints.iisc.ac.in/id/eprint/5277 |
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