Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Kumar, Mahesh and Sinha, Neeraj and Jali, VM and Krupanidhi, SB (2014) Effects of growth temperature on nonpolar a-plane InN grown by molecular beam epitaxy. In: 10th International Conference on Nitride Semiconductors (ICNS), AUG 25-30, 2013, Washington, DC, pp. 932-935.
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Nonpolar a-plane InN films were grown on r-plane sapphire substrate by plasma assisted molecular beam epitaxy with GaN underlayer. Effect of growth temperature on structural, morphological, and optical properties has been studied. The growth of nonpolar a-plane (1 1 -2 0) orientation was confirmed by high resolution X-ray diffraction study. The film grown at 500 degrees C shows better crystallinity with the rocking curve FWHM 0.67 degrees and 0.85 degrees along 0 0 0 1] and 1 - 1 0 0] directions, respectively. Scanning electron micrograph shows formation of Indium droplets at higher growth temperature. Room temperature absorption spectra show growth temperature dependent band gap variation from 0.74-0.81 eV, consistent with the expected Burstein-Moss effect. The rectifying behaviour of the I-V curve indicates the existence of Schottky barrier at the InN and GaN interface. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
| Item Type: | Conference Proceedings |
|---|---|
| Series.: | Physica Status Solidi C-Current Topics in Solid State Physics |
| Additional Information: | Copyright for this article belongs to the WILEY-V C H VERLAG GMBH, PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
| Date Deposited: | 18 Jan 2015 06:50 |
| Last Modified: | 18 Jan 2015 06:50 |
| URI: | http://eprints.iisc.ac.in/id/eprint/50703 |
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