Effect of film thickness and annealing on optical properties of TiO2 thin films and electrical characterization of MOS capacitors

Vishwas, M and Rao, Narasimha K and Chakradhar, RPS and Raichur, Ashok M (2014) Effect of film thickness and annealing on optical properties of TiO2 thin films and electrical characterization of MOS capacitors. In: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 25 (10). pp. 4495-4500.

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Abstract

Titanium dioxide (TiO2) thin films were deposited on glass and silicon (100) substrates by the sol-gel method. The influence of film thickness and annealing temperature on optical transmittance/reflectance of TiO2 films was studied. TiO2 films were used to fabricate metal-oxide-semiconductor capacitors. The capacitance-voltage (C-V), dissipation-voltage (D-V) and current-voltage (I-V) characteristics were studied at different annealing temperatures and the dielectric constant, current density and resistivity were estimated. The loss tangent (dissipation) increased with increase of annealing temperature.

Item Type:	Journal Article
Publication:	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Publisher:	SPRINGER
Additional Information:	Copy right for this article belongs to the SPRINGER, VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS.
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy) Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	08 Nov 2014 05:04
Last Modified:	08 Nov 2014 05:04
URI:	http://eprints.iisc.ac.in/id/eprint/50157

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