Doping a Correlated Band Insulator: A New Route to Half-Metallic Behavior

Garg, Arti and Krishnamurthy, HR and Randeria, Mohit (2014) Doping a Correlated Band Insulator: A New Route to Half-Metallic Behavior. In: PHYSICAL REVIEW LETTERS, 112 (10).

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Abstract

We demonstrate in a simple model the surprising result that turning on an on-site Coulomb interaction U in a doped band insulator leads to the formation of a half-metallic state. In the undoped system, we show that increasing U leads to a first order transition at a finite value U-AF between a paramagnetic band insulator and an antiferomagnetic Mott insulator. Upon doping, the system exhibits half-metallic ferrimagnetism over a wide range of doping and interaction strengths on either side of U-AF. Our results, based on dynamical mean field theory, suggest a new route to half metallicity, and will hopefully motivate searches for new materials for spintronics.

Item Type:	Journal Article
Publication:	PHYSICAL REVIEW LETTERS
Publisher:	AMER PHYSICAL SOC
Additional Information:	Copyright for this article belongs to the AMER PHYSICAL SOC, USA
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	13 May 2014 07:09
Last Modified:	13 May 2014 07:09
URI:	http://eprints.iisc.ac.in/id/eprint/48948

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