Koushik, R and Baenninger, Matthias and Narayan, Vijay and Mukerjee, Subroto and Pepper, Michael and Farrer, Ian and Ritchie, David A and Ghosh, Arindam (2013) Topological Excitations in Semiconductor Heterostructures. In: 31st International Conference on the Physics of Semiconductors (ICPS, JUL 29-AUG 03, 2012, Zurich, SWITZERLAND, pp. 265-266.
Full text not available from this repository. (Request a copy)Abstract
Topological defects play an important role in the melting phenomena in two-dimensions. In this work, we report experimental observation of topological defect induced melting in two-dimensional electron systems (2DES) in the presence of strong Coulomb interaction and disorder. The phenomenon is characterised by measurement of conductivity which goes to zero in a Berezinskii-Kosterlitz-Thouless like transition. Further evidence is provided via low-frequency conductivity noise measurements.
Item Type: | Conference Proceedings |
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Series.: | AIP Conference Proceedings |
Publisher: | AMER INST PHYSICS |
Additional Information: | Copyright for this article belongs to the AMER INST PHYSICS, USA |
Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
Date Deposited: | 15 May 2014 05:56 |
Last Modified: | 15 May 2014 05:57 |
URI: | http://eprints.iisc.ac.in/id/eprint/48895 |
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