Aamir, Mohammed Ali and Goswami, Srijit and Baenniger, Matthias and Tripathi, Vikram and Pepper, Michael and Farrer, Ian and Ritchie, David A and Ghosh, Arindam (2013) Large linear magnetoresistance in a GaAs/AlGaAs heterostructure. In: 31st International Conference on the Physics of Semiconductors (ICPS), JUL 29-AUG 03, 2012, Zurich, SWITZERLAND, pp. 255-256.
Full text not available from this repository. (Request a copy)Abstract
We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.
| Item Type: | Conference Proceedings |
|---|---|
| Series.: | AIP Conference Proceedings |
| Publisher: | AMER INST PHYSICS |
| Additional Information: | Copyright for this article belongs to the AMER INST PHYSICS, USA |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 21 May 2014 06:45 |
| Last Modified: | 21 May 2014 06:45 |
| URI: | http://eprints.iisc.ac.in/id/eprint/48893 |
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