On the mechanism of room temperature superconductivity in substitutionally doped graphene

Sinha, KP and Jindal, Apoorv (2014) On the mechanism of room temperature superconductivity in substitutionally doped graphene. In: SOLID STATE COMMUNICATIONS, 180 . pp. 44-45.

PDF sol_sta_com_180_44_2014.pdf - Published Version Restricted to Registered users only Download (187kB) | Request a copy

Abstract

A combined mechanism involving phononic and electronic processes is suggested for superconductivity in substitutionally doped graphene. The electronic mechanism is similar to the one used for doped fullerene system, MxC60 (M K, Rb, etc.) and triggered by bond polarization due to doped impurities such as B or Al. It is found that on increasing the doping, the superconducting critical temperature can be raised to room temperature. The details of the combined model are given along with the predicted values of T-c. (C) 2013 Elsevier Ltd. All rights reserved,

Item Type:	Journal Article
Publication:	SOLID STATE COMMUNICATIONS
Publisher:	PERGAMON-ELSEVIER SCIENCE LTD
Additional Information:	Copyright for this article belongs to the PERGAMON-ELSEVIER SCIENCE LTD, ENGLAND
Keywords:	Graphene; Boron doping; Phonon and bond-polarization mechanism; High-temperature superconductivity
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	11 May 2014 06:36
Last Modified:	11 May 2014 06:37
URI:	http://eprints.iisc.ac.in/id/eprint/48876

Actions (login required)

View Item