Venkatesh, C and Singh, PP and Renilkumar, M and Varma, M and Bhat, N and Pratap, R and Martyniuk, M and Keating, A and Umama-Membreno, GA and Silva, KKMBD and Dell, JM and Faraone, L (2012) Effect of FIB milling on MEMS SOI cantilevers. In: 2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD), 12-14 Dec. 2012, Melbourne, VIC.
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Official URL: http://dx.doi.org/10.1109/COMMAD.2012.6472412
Abstract
Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from -10MPa/μm to -120MPa/μm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.
| Item Type: | Conference Paper |
|---|---|
| Publisher: | IEEE |
| Additional Information: | Copyright of this article belongs to IEEE. |
| Department/Centre: | Division of Electrical Sciences > Electrical Communication Engineering |
| Date Deposited: | 02 Dec 2013 10:41 |
| Last Modified: | 02 Dec 2013 10:41 |
| URI: | http://eprints.iisc.ac.in/id/eprint/47874 |
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