Multi-resistance states in the electrical switching behavior of amorphous Si15Te75Ge10 thin films: Possibility of multi-bit storage

Lakshmi, KP and Asokan, S (2013) Multi-resistance states in the electrical switching behavior of amorphous Si15Te75Ge10 thin films: Possibility of multi-bit storage. In: JOURNAL OF NON-CRYSTALLINE SOLIDS, 373 . pp. 13-17.

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Abstract

Electrical switching studies on amorphous Si15Te75Ge10 thin film devices reveal the existence of two distinct, stable low-resistance, SET states, achieved by varying the electrical input to the device. The multiple resistance levels can be attributed to multi-stage crystallization, as observed from temperature dependant resistance studies. The devices are tested for their ability to be RESET with minimal resistance degradation; further, they exhibit a minimal drift in the SET resistance value even after several months of switching. (c) 2013 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Publication:	JOURNAL OF NON-CRYSTALLINE SOLIDS
Publisher:	ELSEVIER SCIENCE BV
Additional Information:	Copyright of this article is belongs to ELSEVIER
Keywords:	Chalcogenide phase change memory; Multiple SET states; DC resistance
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	03 Sep 2013 10:29
Last Modified:	03 Sep 2013 10:29
URI:	http://eprints.iisc.ac.in/id/eprint/47034

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