Electrical transport studies of MBE grown InGaN/Si isotype heterojunctions

Kumar, Mahesh and Roul, Basanta and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kalghatgi, AT and Krupanidhi, SB (2012) Electrical transport studies of MBE grown InGaN/Si isotype heterojunctions. In: CURRENT APPLIED PHYSICS, 13 (1). pp. 26-30.

PDF cur_app_phy_13-1_26_2012.pdf - Published Version Restricted to Registered users only Download (667kB) | Request a copy

Abstract

The temperature dependent electrical transport behavior of n-n InGaN/Si heterostructures grown by plasma-assisted MBE was studied. Structural characteristics of the as-grown InGaN epilayers were evaluated high resolution X-ray diffraction and composition of InGaN was estimated from photoluminescence spectra using standard Vegard's law. Current density-voltage plots (J-V-T) revealed that the ideality factor (eta) and Schottky barrier height (SBH) (Phi(b)) are temperature dependent and the incorrect values of the Richardson's constant (A**) produced, suggests an inhomogeneous barrier at the heterostructure interface. The higher value of the ideality factor compared to the ideal value and its temperature dependence suggest that the current transport is mainly dominated by thermionic field emission. (C) 2012 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Publication:	CURRENT APPLIED PHYSICS
Publisher:	Elsevier Science
Additional Information:	Copyright for this article belongs to Elsevier Science
Keywords:	Nitrides; MBE; Heterojunctions
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	15 Oct 2012 11:08
Last Modified:	30 Oct 2012 12:11
URI:	http://eprints.iisc.ac.in/id/eprint/45219

Actions (login required)

View Item