Temperature dependent transport studies in InN quantum dots grown by droplet epitaxy on silicon nitride/Si substrate

Kumar, Mahesh and Roul, Basanta and Shetty, Arjun and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kalghatgi, AT and Krupanidhi, SB (2011) Temperature dependent transport studies in InN quantum dots grown by droplet epitaxy on silicon nitride/Si substrate. In: Applied Physics Letters, 99 (15).

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Abstract

InN quantum dots (QDs) were fabricated on silicon nitride/Si (111) substrate by droplet epitaxy. Single-crystalline structure of InN QDs was verified by transmission electron microscopy, and the chemical bonding configurations of InN QDs were examined by x-ray photoelectron spectroscopy. Photoluminescence measurement shows a slight blue shift compared to the bulk InN, arising from size dependent quantum confinement effect. The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of InN QDs were studied in a metal-semiconductor-metal configuration in the temperature range of 80-300K. The I-V characteristics of lateral grown InN QDs were explained by using the trap model. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651762]

Item Type:	Journal Article
Publication:	Applied Physics Letters
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Department/Centre:	Division of Chemical Sciences > Materials Research Centre Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	23 Nov 2011 10:56
Last Modified:	23 Nov 2011 10:56
URI:	http://eprints.iisc.ac.in/id/eprint/42286

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