The role of defects in carrier type reversal in bismuth doped Ge-Se glasses by photoluminescence spectroscopy

Bhat, Asha N and Sangunni, KS and Rao, KSRK (2001) The role of defects in carrier type reversal in bismuth doped Ge-Se glasses by photoluminescence spectroscopy. In: Journal of Optoelectronics and Advanced Materials, 3 (3). pp. 735-740.

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Abstract

The role played by defects in bringing out n-type conduction in Ge20Se80-xBix and Ge20Se70-xBixTe10 glasses is using investigated photoluminescence (PL) spectroscopy. It was found that for both the systems, the compositions at lower Bi content exhibit luminescence with fine features associated while the compositions that show n-type conduction do not exhibit luminescence. The identification of the associated fine features, carried out by deconvoluting the experimental spectra, reveals that Bi addition brings out a relative diminishing in D+ defects as compared to D- ones. The study gives an overall indication for the role played by native defects in bringing out n-type conduction in Bi-doped glasses.

Item Type:	Journal Article
Publication:	Journal of Optoelectronics and Advanced Materials
Publisher:	National Institute of Research & Development for Optoelectronics, Romania
Additional Information:	Copyright of this article belongs to National Institute of Research & Development for Optoelectronics, Romania
Keywords:	Ge-Se glass;Photoluminescence;Defects;Bi doped.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	09 Nov 2011 05:37
Last Modified:	09 Nov 2011 05:37
URI:	http://eprints.iisc.ac.in/id/eprint/40379

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