Bhat, Asha N and Sangunni, KS and Rao, KSRK (2011) PL due to Discrete Gap Levels in Some Chalcogenide Glasses- A Configurational Coordinate Diagram Illustration. In: MRS Proceedings, 667 . G3.4.
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Photoluminescence (PL) studies were carried out on a-Se and a few Ge20Se80−xBix and Ge20Se70−xBixTe10 bulk glassy semiconductors at 4.2 K with Ar+ laser as excitation source. While a-Se and samples with lesser at% of Bi show fine structured PL with a large Stokes shift, samples with higher at% of Bi did not show any detectable PL. The investigations show at least three radiative recombination transitions. Features extracted by deconvoluting the experimental spectra show that the discrete gap levels associated with the inherent coordination defects are involved in the PL transitions. Absence of PL in samples with higher Bi at% are explained on the basis of nonradiative transition mechanisms. Overall PL mechanism involving gap levels in chalcogenide glasses is illustrated with the help of a configurational coordinate diagram.
| Item Type: | Journal Article |
|---|---|
| Publication: | MRS Proceedings |
| Publisher: | Cambridge University Press |
| Additional Information: | Copyright of this article belongs to Cambridge University Press. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 19 Aug 2011 11:41 |
| Last Modified: | 19 Aug 2011 11:41 |
| URI: | http://eprints.iisc.ac.in/id/eprint/39835 |
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