Asokan, S (2001) Electrical switching in chalcogenide glasses - Some newer insights. In: Journal of Optoelectronics and Advanced Materials, 3 (3). pp. 753-756.
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Abstract
The recent studies on the switching. behavior of several chalcogenide semiconductors indicate that there exists a close relation between the electrical switching and structural effects in these materials; the two network topological Thresholds, namely the Rigidity Percolation and the Chemical Threshold are found to influence considerably the composition dependence of the switching voltages/fields of many memory and threshold switching glasses. Further, changes in the coordination of constituent atoms are found to effect a change in the switching behavior (memory to threshold), Also, an interesting relation has been established between the type of switching exhibited and the thermal diffusivity of the material.
Item Type: | Journal Article |
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Publication: | Journal of Optoelectronics and Advanced Materials |
Publisher: | National Institute of Research & Development for Optoelectronics, Romania |
Additional Information: | Copyright of this article belongs to National Institute of Research & Development for Optoelectronics, Romania. |
Keywords: | electrical switching;chalcogenide glasses;amorphous semiconductors;photo-acoustic spectroscopy. |
Department/Centre: | Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics |
Date Deposited: | 02 Aug 2011 06:42 |
Last Modified: | 02 Aug 2011 06:42 |
URI: | http://eprints.iisc.ac.in/id/eprint/39539 |
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