Liquid phase epitaxial growth of pure and doped GaSb layers: morphological evolution and native defects

Dutta, PS and Bhat, HL and Kumar, Vikram (1995) Liquid phase epitaxial growth of pure and doped GaSb layers: morphological evolution and native defects. In: Bulletin of Materials Science, 18 (7). pp. 865-874.

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Abstract

Undoped and Te-doped gallium antimonide (GaSb) layers have been grown on GaSb bulk substrates by the liquid phase epitaxial technique from Ga-rich and Sb-rich melts. The nucleation morphology of the grown layers has been studied as a function of growth temperature and substrate orientation. MOS structures have been fabricated on the epilayers to evaluate the native defect content in the grown layers from the C-V characteristics. Layers grown from antimony rich melts always exhibit p-type conductivity. In contrast, a type conversion from p- to n- was observed in layers grown from gallium rich melts below 400 degrees C. The electron mobility of undoped n-type layers grown from Ga-rich melts and tellurium doped layers grown from Sb- and Ga-rich solutions has been evaluated.

Item Type:	Journal Article
Publication:	Bulletin of Materials Science
Publisher:	Indian Academy of Sciences
Additional Information:	Copyright of this article belongs to Indian Academy of Sciences.
Keywords:	liquid phase epitaxy;growth;GaSb
Department/Centre:	Division of Chemical Sciences > Solid State & Structural Chemistry Unit Division of Physical & Mathematical Sciences > Physics
Date Deposited:	31 May 2011 08:18
Last Modified:	31 May 2011 08:18
URI:	http://eprints.iisc.ac.in/id/eprint/38075

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