Padmini , P and Kutty, TRN (1994) Influence of Bi 3+ ions in enhancing the magnitude of positive temperature coefficients of resistance in n-BaTiO3 ceramics. In: Journal of materials science: materials in electronics, 5 (4). 203-209 .
PDF
INFLUENCE_OF_b_13.pdf - Published Version Restricted to Registered users only Download (678kB) | Request a copy |
Abstract
Bi3+ ions substituting at Ba-sites in a limited concentration range with another donor dopant occupying the Ti-sites in polycrystalline BaTiO3 enhanced the positive temperature coefficient of resistance (PTCR) by over seven orders of magnitude. These ceramics did not require normal post sinter annealing or a change to an oxygen atmosphere during annealing. These ceramics had low porosities coupled with better stabilities to large applied electric fields and chemically reducing atmospheres. Bi3+ ions limited the grain growth to less than 8 mum in size, they enhanced the concentration of acceptor-type trap centres at the grain-boundary-layer regions and maintained complete tetragonality at low grain sizes in BaTiO3 ceramics.
Item Type: | Journal Article |
---|---|
Publication: | Journal of materials science: materials in electronics |
Publisher: | Springer |
Additional Information: | Copyright of this article belongs to Springer. |
Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
Date Deposited: | 24 May 2011 08:32 |
Last Modified: | 24 May 2011 08:32 |
URI: | http://eprints.iisc.ac.in/id/eprint/36550 |
Actions (login required)
View Item |