Negative differential capacitance in n-GaN/p-Si heterojunctions

Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Negative differential capacitance in n-GaN/p-Si heterojunctions. In: Solid State Communications, 151 (5). pp. 356-359.

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Abstract

Negative differential capacitance (NDC) has been observed in n-GaN/p-Si heterojunctions grown by plasma assisted molecular beam epitaxy (PAMBE). The NDC is observed at low frequencies 1 and 10 kilohertz (kHz) and disappeared at a higher testing frequency of 100 kHz. The NDC is also studied with temperature and found that it has disappeared above 323 degrees C. Current-Voltage (I-V) characteristics of n-GaN /p-Si heterojunction were measured at different temperatures and are attributed to the space-charge-limited current (SCLC). A simple model involving two quantum states is proposed to explain the observed NDC behavior. (C) 2010 Elsevier Ltd. All rights reserved.

Item Type:	Journal Article
Publication:	Solid State Communications
Publisher:	Elsevier Science
Additional Information:	Copyright of this article belongs to Elsevier Science.
Keywords:	GaN; MBE; Negative differential capacitance; Heterojunctions
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	21 Mar 2011 09:36
Last Modified:	21 Mar 2011 09:36
URI:	http://eprints.iisc.ac.in/id/eprint/35973

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