Cheek, G and Genis, A and DuBow, JB and Verneker, Pai VR (1979) Antireflection properties of indium tin oxide (ITO) on silicon for photovoltaic applications. In: Applied Physics Letters, 35 (7). pp. 495-497.
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Abstract
The short‐circuit current density (Jsc) of indium tin oxide (ITO/silicon solar cells has been shown both theoretically and experimentally to be a function of the thickness of the ion beam sputtered ITO layer. These results can be accounted for by computing the optical reflection from the ITO/silicon interface.
| Item Type: | Journal Article |
|---|---|
| Publication: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| Additional Information: | Copyright of this article belongs to American Institute of Physics. |
| Department/Centre: | Division of Chemical Sciences > Inorganic & Physical Chemistry |
| Date Deposited: | 16 Dec 2010 06:54 |
| Last Modified: | 16 Dec 2010 06:54 |
| URI: | http://eprints.iisc.ac.in/id/eprint/34512 |
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