Negative differential resistance in doped poly(3-methylthiophene) devices

Anjaneyulu, P and Sangeeth, Suchand CS and Menon, Reghu (2010) Negative differential resistance in doped poly(3-methylthiophene) devices. In: Journal of Physics D: Applied Physics, 43 (42).

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Abstract

The current density-voltage (J-V) characteristics of poly(3-methylthiophene) devices show a negative differential resistance (NDR) at room temperature with a large peak to valley current ratio (similar to 507). This NDR can be tuned by two orders of magnitude by controlling the carrier density due to the variation of the space-charge region in the device. The temperature and scan rate dependent J-V measurements infer that the NDR is mainly driven by the trapping and de-trapping of carriers. The photo-generation of carriers is observed to reduce the NDR effect.

Item Type:	Journal Article
Publication:	Journal of Physics D: Applied Physics
Publisher:	Institute of Physics
Additional Information:	Copyright of this article belongs to Institute of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	26 Oct 2010 06:33
Last Modified:	26 Oct 2010 06:33
URI:	http://eprints.iisc.ac.in/id/eprint/33414

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