The physical properties of SnS films grown on lattice-matched and amorphous substrates

Devika, M and Reddy, N Koteeswara and Prashantha, M and Ramesh, KP and Reddy, S Venkatramana and Hahn, YB and Gunasekhar, KR (2010) The physical properties of SnS films grown on lattice-matched and amorphous substrates. In: Physica Status Solidi A, 207 (8). pp. 1864-1869.

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Abstract

The development of high-quality tin monosulphide (SnS) layers is one of the crucial tasks in the fabrication of efficient SnS-based optoelectronic devices. Reduction of strain between film and the substrate by using an appropriate lattice-matched (LM) substrate is a new attempt for the growth of high-quality layers. In this view, the SnS films were deposited on LM Al substrate using the thermal evaporation technique with a low rate of evaporation. The as-grown SnS films were characterized using appropriate techniques and the obtained results are discussed by comparing them with the properties of SnS films grown on amorphous substrate under the same conditions. From structural analysis of the films, it is noticed that the SnS films deposited on amorphous substrate have crystallites that were oriented along different directions. However, the SnS crystallites grown on Al substrate exhibited epitaxial growth along the 101] direction. Photoluminescence (PL) and Raman studies reveal that the films grown on Al substrate have better optical properties than those of the films grown on amorphous substrates. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Item Type:	Journal Article
Publication:	Physica Status Solidi A
Publisher:	John Wiley & Sons
Additional Information:	Copyright of this article belongs to John Wiley & Sons.
Keywords:	vacuum deposition; nanocrystalline films; physical properties; lattice-matched substrate.
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics Division of Physical & Mathematical Sciences > Physics
Date Deposited:	04 Oct 2010 11:11
Last Modified:	04 Oct 2010 11:11
URI:	http://eprints.iisc.ac.in/id/eprint/32930

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