Dielectric anomaly in Li-doped zinc oxide thin films grown by sol-gel route

Dhananjay, * and Singh, Satyendra and Nagaraju, J and Krupanidhi, SB (2007) Dielectric anomaly in Li-doped zinc oxide thin films grown by sol-gel route. In: Applied Physics A: Materials Science & Processing, 88 (2). pp. 421-424.

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Abstract

Sol-gel route was employed to grow polycrystalline thin films of Li-doped ZnO thin films (Zn1-xLixO, x=0.15). Polycrystalline films were obtained at a growth temperature of 400-500 degrees C. Ferroelectricity in Zn0.85Li0.15O was verified by examining the temperature variation of the real and imaginary parts of dielectric constant, and from the C-V measurements. The phase transition temperature was found to be 330 K. The room-temperature dielectric constant and dissipation factor were 15.5 and 0.09 respectively, at a frequency of 100 kHz. The films exhibited well-defined hysteresis loop, and the values of spontaneous polarization (P-s) and coercive field were 0.15 mu C/cm(2) and 20 kV/cm, respectively, confirming the presence of ferroelectricity.

Item Type:	Journal Article
Publication:	Applied Physics A: Materials Science & Processing
Publisher:	Springer
Additional Information:	Copyright of this article belongs to Springer.
Department/Centre:	Division of Chemical Sciences > Materials Research Centre Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	10 Jun 2010 10:05
Last Modified:	05 Mar 2019 09:14
URI:	http://eprints.iisc.ac.in/id/eprint/26165

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