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Field-Effect and Frequency Dependent Transport in Semiconductor-Enriched Single-Wall Carbon Nanotube Network Device

Jaiswal, Manu and Sangeeth, CS Suchand and Wang, Wei and Sun, Ya-Ping and Menon, Reghu (2009) Field-Effect and Frequency Dependent Transport in Semiconductor-Enriched Single-Wall Carbon Nanotube Network Device. In: Journal of Nanoscience and Nanotechnology, 9 (11). pp. 6533-6537.

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Abstract

The electrical and optical response of a field-effect device comprising a network of semiconductor-enriched single-wall carbon nanotubes, gated with sodium chloride solution is investigated. Field-effect is demonstrated in a device that uses facile fabrication techniques along with a small-ion as the gate electrolyte-and this is accomplished as a result of the semiconductor enhancement of the tubes. The optical transparency and electrical resistance of the device are modulated with gate voltage. A time-response study of the modulation of optical transparency and electrical resistance upon application of gate voltage suggests the percolative charge transport in the network. Also the ac response in the network is investigated as a function of frequency and temperature down to 5 K. An empirical relation between onset frequency and temperature is determined.

Item Type: Journal Article
Publication: Journal of Nanoscience and Nanotechnology
Publisher: American Scientific Publishers
Additional Information: Copyright of this article belongs to American Scientific Publishers, 2009.
Keywords: Transparent SWNT; Electrolyte Gated Field-Effect Device; ac Impedance
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Biological Sciences > Biochemistry
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 20 Dec 2009 09:25
Last Modified: 20 Dec 2009 09:25
URI: http://eprints.iisc.ac.in/id/eprint/24529

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